CSD25211W1015 Datasheet دیتاشیت

CSD25211W1015 Datasheet

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نام دیتاشیت CSD25211W1015 Datasheet
حجم فایل 1414.117 کیلوبایت
نوع فایل pdf
تعداد صفحات 13

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CSD25211W1015 14 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD25211W1015
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 1W
  • Total Gate Charge (Qg@Vgs): 4.1nC@4.5V
  • Input Capacitance (Ciss@Vds): 570pF@10V
  • Continuous Drain Current (Id): 3.2A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.1V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 33mΩ@1.5A,4.5V
  • Package: BGA-6
  • Manufacturer: Texas Instruments
  • FET Type: P-Channel
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Base Part Number: CSD2521
  • Supplier Device Package: 6-DSBGA (1x1.5)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 10V
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Mounting Type: Surface Mount
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 1.5A, 4.5V
  • Packaging: Cut Tape (CT)
  • Series: NexFET™
  • Package / Case: 6-UFBGA, DSBGA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
  • Vgs (Max): -6V
  • Part Status: Active
  • Power Dissipation (Max): 1W (Ta)
  • Technology: MOSFET (Metal Oxide)
  • detail: P-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount 6-DSBGA (1x1.5)

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